| PART |
Description |
Maker |
| STE STE600016T4KI STE600016T4KX STE600016T4MI STE6 |
SuperTan? Extended (STE) Capacitors Wet Tantalum with Hermetic Seal
SuperTan庐 Extended (STE) Capacitors Wet Tantalum with Hermetic Seal
SuperTan㈢ Extended (STE) Capacitors Wet Tantalum with Hermetic Seal
|
Vishay Siliconix
|
| STE03S05F STE03S15F STE05S09F |
STE Series - 1W Single Output Surface Mount DC-DC Converter
|
Superworld Electronics
|
| KM416V1204BJ KM416V1004BT-L7 KM416V1204BT-L7 |
3.3V, 1M x 16 bit CMOS DRAM with extended data out, 70ns
1M x 16BIT CMOS DYNAMIT RAM WITH EXTENDED DATA OUT
|
Samsung Electronic
Samsung semiconductor
|
| PEB2054NV1.0 PEB2054-NV1.0 PEB2054N-V10TR |
ISDN Controller, S/T, Commercial, 44-LDCC
EPIC-S (Extended PCM Interface Contro...
Controllers, Extended PCM Interface Controller, Tape and Reel
|
Infineon Technologies
|
| GLT41216-30J4 GLT41216-30TC GLT41216-35J4 GLT41216 |
30ns; 64K x 16 CMOS dynamic RAM with extended data output
35ns; 64K x 16 CMOS dynamic RAM with extended data output
40ns; 64K x 16 CMOS dynamic RAM with extended data output
45ns; 64K x 16 CMOS dynamic RAM with extended data output
|
G-LINK Technology
|
| Q67100-H9020 SDE2526 Q67100-H3262 Q67100-H3261 SDE |
Nonvolatile Memory 2-Kbit E2PROM with I2C Bus Interface with Extended Temperature Range 非易失性内与I2C总线接口与千位E2PROM的扩展温度范
OSC 5V SMT 7X5 CMOS PROGRM 256 X 8 I2C/2-WIRE SERIAL EEPROM, PDIP8
Nonvolatile Memory 2-Kbit EEPROM with IIC Bus Interface with Extended Temperature Range(2-K位EEPROM(带IIC总线接口,扩展温度范围))
From old datasheet system
|
SIEMENS AG
SIEMENS[Siemens Semiconductor Group]
|
| KM416C1004CJ-5 KM416C1004CJ-6 KM416C1004CJL-6 KM41 |
1M x 16Bit CMOS dynamic RAM with extended data out, 50ns, VCC=5.0V, refresh period=64ms
1M x 16Bit CMOS dynamic RAM with extended data out, 60ns, VCC=5.0V, refresh period=64ms
1M x 16Bit CMOS dynamic RAM with extended data out, 60ns, VCC=5.0V, self-refresh
1M x 16Bit CMOS dynamic RAM with extended data out, 50ns, VCC=5.0V, refresh period=16ms
1M x 16Bit CMOS dynamic RAM with extended data out, 60ns, VCC=5.0V, refresh period=16ms
1M x 16Bit CMOS dynamic RAM with extended data out, 45ns, VCC=5.0V, self-refresh
|
Samsung Electronic
|
| KM416C254D KM416V254D KM416C254DJL-5 KM416C254DJL- |
256K x 16Bit CMOS dynamic RAM with extended data out, Vcc=3.3V, 70ns, self-refresh
256K x 16Bit CMOS dynamic RAM with extended data out, Vcc=3.3V, 60ns, self-refresh
256K x 16Bit CMOS dynamic RAM with extended data out, Vcc=3.3V, 50ns, self-refresh
256K x 16Bit CMOS dynamic RAM with extended data out, Vcc=5.0V, 70ns, self-refresh
256K x 16Bit CMOS dynamic RAM with extended data out, Vcc=5.0V, 60ns, self-refresh
256K x 16Bit CMOS dynamic RAM with extended data out, Vcc=5.0V, 50ns, self-refresh
|
Samsung Electronic
|
| 08-130150-01 08-130150-01-A1 |
OUTLINE EXTENDED PFC MINI 1/RU
|
VICOR[Vicor Corporation]
|
| 85814-101LF |
FEMALE KEY HALF, EXTENDED
|
FCI connector
|
